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該電(dian)(dian)(dian)(dian)(dian)路(lu)主要由(you)鋰(li)(li)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)保護專用(yong)集(ji)成電(dian)(dian)(dian)(dian)(dian)路(lu)DW01，充(chong)(chong)、放(fang)電(dian)(dian)(dian)(dian)(dian)控(kong)制(zhi)(zhi)(zhi)MOSFET1(內含兩只(zhi)N溝道MOSFET)等部(bu)分組成，單(dan)(dan)體鋰(li)(li)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)接在B+和B-之(zhi)間，電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)組從P+和P-輸(shu)(shu)(shu)出(chu)電(dian)(dian)(dian)(dian)(dian)壓(ya)。充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)時(shi)(shi)，充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)器輸(shu)(shu)(shu)出(chu)電(dian)(dian)(dian)(dian)(dian)壓(ya)接在P+和P-之(zhi)間，電(dian)(dian)(dian)(dian)(dian)流(liu)從P+到單(dan)(dan)體電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)的(de)B+和B-，再經過(guo)充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)控(kong)制(zhi)(zhi)(zhi)MOSFET到P-。在充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)過(guo)程中(zhong)，當單(dan)(dan)體電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)的(de)電(dian)(dian)(dian)(dian)(dian)壓(ya)超(chao)過(guo)4.35V時(shi)(shi)，專用(yong)集(ji)成電(dian)(dian)(dian)(dian)(dian)路(lu)DW01的(de)OC腳輸(shu)(shu)(shu)出(chu)信號(hao)使充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)控(kong)制(zhi)(zhi)(zhi)MOSFET關(guan)斷(duan)，鋰(li)(li)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)立即(ji)停止充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)，從而(er)防止鋰(li)(li)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)因過(guo)充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)而(er)損壞(huai)。放(fang)電(dian)(dian)(dian)(dian)(dian)過(guo)程中(zhong)，當單(dan)(dan)體電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)的(de)電(dian)(dian)(dian)(dian)(dian)壓(ya)降到2.30V時(shi)(shi)，DW01的(de)OD腳輸(shu)(shu)(shu)出(chu)信號(hao)使放(fang)電(dian)(dian)(dian)(dian)(dian)控(kong)制(zhi)(zhi)(zhi)MOSFET關(guan)斷(duan)，鋰(li)(li)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)立即(ji)停止放(fang)電(dian)(dian)(dian)(dian)(dian)，從而(er)防止鋰(li)(li)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)因過(guo)放(fang)電(dian)(dian)(dian)(dian)(dian)而(er)損壞(huai)，DW01的(de)CS腳為電(dian)(dian)(dian)(dian)(dian)流(liu)檢測腳，輸(shu)(shu)(shu)出(chu)短路(lu)時(shi)(shi)，充(chong)(chong)放(fang)電(dian)(dian)(dian)(dian)(dian)控(kong)制(zhi)(zhi)(zhi)MOSFET的(de)導通(tong)壓(ya)降劇增，CS腳電(dian)(dian)(dian)(dian)(dian)壓(ya)迅(xun)(xun)速(su)升高，DW01輸(shu)(shu)(shu)出(chu)信號(hao)使充(chong)(chong)放(fang)電(dian)(dian)(dian)(dian)(dian)控(kong)制(zhi)(zhi)(zhi)MOSFET迅(xun)(xun)速(su)關(guan)斷(duan)，從而(er)實現過(guo)電(dian)(dian)(dian)(dian)(dian)流(liu)或短路(lu)保護。

二次鋰(li)電池的優勢是什么?

1. 高(gao)的能量密度(du)

2. 高的(de)工作電壓

3. 無(wu)記憶效應

4. 循環壽命長(chang)

5. 無污染

6. 重量(liang)輕

7. 自放電小(xiao)

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